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| ? ! " #!$!% !&%''( ) # * # + , + - &# + # , # , # ,+ , ! ? power management in notebook computer, portable equipment and battery powered systems apm9932c handling code temp. range package code package code k : sop-8 operating junction temp. range c : -55 to 150c handling code tu : tube tr : tape & reel lead free code l : lead free device blank : original device apm9932c k : apm9932c xxxxx xxxxx - date code lead free code ? n-channel 20v/9a, r ds(on) =12m ? (typ.) @ v gs = 4.5v r ds(on) =18m ? (typ.) @ v gs = 2.5v ? ? ? ? ? p-channel -20v/-6a, r ds(on) =30m ? (typ.) @ v gs =-4.5v r ds(on) =50m ? (typ.) @ v gs =-2.5v ? ? ? ? ? super high dense cell design ? ? ? ? ? reliable and rugged ? ? ? ? ? lead free available (rohs compliant) g1 s1 s2 g2 d d d d top view of sop ? 8 d2 (5) g2 s2 d2 (6) (4) (3) g1 s1 d1 d1 (8) (7) (2) (1) n-p channel mosfet note: anpec lead-free products contain molding compounds/die attach materials and 100% matte in plate termina- tion finish; which are fully compliant with rohs and compatible with both snpb and lead-free soldiering operations. anpec lead-free products meet or exceed the lead-free requirements of ipc/jedec j std-020c for msl classifica- tion at lead-free peak reflow temperature. ? ! " #!$!% !&%''( % ! (t a = 25 c unless otherwise noted) " # (t a = 25 c unless otherwise noted) symbol parameter n channel p channel unit v dss drain-source voltage 20 -20 v gss gate-source voltage 16 12 v i d * continuous drain current 9 -6 i dm * 300 s pulsed drain current 9 30 30 -20 a i s * diode continuous forward current 1.5 -1.2 a t j maximum junction temperature 150 t stg storage temperature range -55 to 150 c t a =25 c 2 p d * power dissipation t a =100 c 0.8 w r ja * thermal resistance-junction to ambient 62.5 c/w note: *surface mounted on 1in 2 pad area, t 10sec. apm9932ck symbol parameter test condition min. typ. max. unit static characteristics v gs =0v, i ds =250 a n-ch 20 bv dss drain-source breakdown voltage v gs =0v, i ds =-250 a p-ch -20 v v ds =16v, v gs =0v n-ch 1 i dss zero gate voltage drain current v ds =-16v, v gs =0v p-ch -1 a v ds =v gs , i ds =250 a n-ch 0.55 0.7 1.5 v gs(th) gate threshold voltage v ds =v gs , i ds =-250 a p-ch -0.45 -0.6 -1 v v gs =16v, v ds =0v n-ch 100 i gss gate leakage current v gs =12v, v ds =0v p-ch 100 na v gs =4.5v, i ds =9a n-ch 12 18 v gs =-4.5v, i ds =-6a p-ch 30 45 v gs =2.5v, i ds =6a n-ch 18 27 r ds(on) a drain-source on-state resistance v gs =-2.5v, i ds =-4a p-ch 50 65 m ? i sd =1.5a, v gs =0v n-ch 0.75 1.3 v sd a diode forward voltage i sd =-1.2a, v gs =0v p-ch -0.8 -1.3 v ? ! " #!$!% !&%''( . notes: a : pulse test ; pulse width 300 s, duty cycle 2 %. b : guaranteed by design, not subject to production testing. " # $ %& (t a = 25 c unless otherwise noted) apm9932ck symbol parameter test condition min. typ. max. unit dynamic characteristics b n-ch 1205 c iss input capacitance p-ch 1210 n-ch 310 c oss output capacitance p-ch 310 n-ch 210 c rss reverse transfer capacitance n-channel v gs =0v, v ds =20v, frequency=1.0mhz p-channel v gs =0v, v ds =-20v, frequency=1.0mhz p-ch 205 pf n-ch 8 15 t d(on) turn-on delay time p-ch 7 13 n-ch 10 17 t r turn-on rise time p-ch 9 16 n-ch 29 43 t d(off) turn-off delay time p-ch 27 42 n-ch 7 11 t f turn-off fall time n-channel v dd =10v, r l =10 ? , i ds =1a, v gen =4.5v, r g =6 ? p-channel v dd =-10v, r l =10 ? , i ds =-1a, v gen =-4.5v, r g =6 ? p-ch 6 9 ns gate charge characteristics b n-ch 14 22 q g total gate charge p-ch 17 25 n-ch 5 q gs gate-source charge p-ch 5.2 n-ch 2.8 q gd gate-drain charge n-channel v ds =10v, v gs =4.5v, i ds =6a p-channel v ds =-10v, v gs =-4.5v, i ds =-5a p-ch 3.6 nc ? ! " #!$!% !&%''( / 1e-4 1e-3 0.01 0.1 1 10 30 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r ja : 62.5 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 '( # i d - drain current (a) drain current t j - junction temperature ( c) safe operation area v ds - drain - source voltage (v) thermal transient impedance square wave pulse duration (sec) power dissipation p tot - power (w) t j - junction temperature ( c) i d - drain current (a) n-channel 0 20406080100120140160 0.0 0.5 1.0 1.5 2.0 2.5 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 0.01 0.1 1 10 100 0.01 0.1 1 10 100 rds(on) limit 1s t a =25 o c 10ms 1ms 100ms dc normalized transient thermal resistance ? ! " #!$!% !&%''( ( r ds(on) - on - resistance ( ? ) drain-source on resistance i d - drain current (a) t j - junction temperature ( c) gate threshold voltage v ds - drain-source voltage (v) i d - drain current (a) output characteristics transfer characteristics v gs - gate - source voltage (v) i d - drain current (a) normalized threshold voltage '( # $ %& 0246810 0 4 8 12 16 20 2.5v 2v v gs = 3, 4, 5, 6, 7, 8, 9, 10v 0 5 10 15 20 25 30 0 5 10 15 20 25 30 v gs =4.5v v gs =2.5v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 4 8 12 16 20 t j =125 o c t j =25 o c t j =-55 o c -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds =250 ? ? ! " #!$!% !&%''( 0 v ds - drain - source voltage (v) drain-source on resistance normalized on resistance t j - junction temperature ( c) c - capacitance (pf) v sd - source - drain voltage (v) source-drain diode forward i s - source current (a) capacitance gate charge q g - gate charge (nc) v gs - gate - source voltage (v) '( # $ %& -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r on @t j =25 o c: 12m ? v gs = 4.5v i ds = 9a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 20 t j =150 o c t j =25 o c 0 4 8 12 16 20 0 400 800 1200 1600 2000 frequency=1mhz crss coss ciss 0 5 10 15 20 25 30 0 2 4 6 8 10 v ds =10 v i d = 6 a ? ! " #!$!% !&%''( 1 1e-4 1e-3 0.01 0.1 1 10 30 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r ja : 62.5 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 '( # $ %& power dissipation p tot - power (w) t j - junction temperature ( c) -i d - drain current (a) drain current t j - junction temperature ( c) safe operation area -v ds - drain - source voltage (v) thermal transient impedance square wave pulse duration (sec) -i d - drain current (a) p-channel 0 20406080100120140160 0.0 0.5 1.0 1.5 2.0 2.5 0 20 40 60 80 100 120 140 160 0 2 4 6 8 0.01 0.1 1 10 100 0.01 0.1 1 10 50 1ms rds(on) limit 1s t a =25 o c 10ms 100ms dc normalized transient thermal resistance ? ! " #!$!% !&%''( 2 '( # $ %& r ds(on) - on - resistance ( ? ) drain-source on resistance -i d - drain current (a) -v ds - drain - source voltage (v) -i d - drain current (a) output characteristics t j - junction temperature ( c) gate threshold voltage transfer characteristics -v gs - gate - source voltage (v) -i d - drain current (a) normalized threshold voltage 02468 0 2 4 6 8 10 -2v v gs = -2.5, -3, -4, -5, -6, -7, -8, -9, -10v 0246810 10 20 30 40 50 60 70 80 v gs = -2.5v v gs = -4.5v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 t j =125 o c t j =25 o c t j =-55 o c -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 i ds = -250 ? ? ! " #!$!% !&%''( 3 '( # $ %& drain-source on resistance normalized on resistance t j - junction temperature ( c) -v sd - source - drain voltage (v) source-drain diode forward -i s - source current (a) -v ds - drain - source voltage (v) c - capacitance (pf) capacitance gate charge q g - gate charge (nc) -v gs - gate - source voltage (v) -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r on @t j =25 o c: 30m ? v gs = -4.5v i ds = -6a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 t j =150 o c t j =25 o c 0 4 8 121620 0 400 800 1200 1600 2000 ciss frequency=1mhz crss coss 0 5 10 15 20 25 30 35 0 2 4 6 8 10 v ds = -10v i d = -5a ? ! " #!$!% !&%''( )' millimeters inches dim min. max. min. max. a 1.35 1.75 0.053 0.069 a1 0.10 0.25 0.004 0.010 d 4.80 5.00 0.189 0.197 e 3.80 4.00 0.150 0.157 h 5.80 6.20 0.228 0.244 l 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27bsc 0.50bsc 18 8 h e e1 e2 0.015x45 d a a1 0.004max. 1 l sop-8 pin ( reference jedec registration ms-012) ? ! " #!$!% !&%''( )) terminal material solder-plated copper (solder material : 90/10 or 63/37 snpb), 100%sn lead solderability meets eia specification rsi86-91, ansi/j-std-002 category 3. t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 temperature time critical zone t l to t p ! ) (ir/convection or vpr reflow) ! ) #( * sn-pb eutectic assembly pb-free assembly profile feature large body small body large body small body average ramp-up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat temperature min (tsmin) temperature mix (tsmax) time (min to max)(ts) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds tsmax to t l - ramp-up rate 3 c/second max tsmax to t l temperature(t l ) time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(tp) 225 +0/-5 c 240 +0/-5 c 245 +0/-5 c 250 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 10-30 seconds 10-30 seconds 20-40 seconds ramp-down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note: all temperatures refer to topside of the package. measured on the body surface. ? ! " #!$!% !&%''( )% ' +! a j b t2 t1 c t ao e w po p ko bo d1 d f p1 test item method description solderability mil-std-883d-2003 245 c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125 c pct jesd-22-b, a102 168 hrs, 100% rh, 121 c tst mil-std 883d-1011.9 -65 c ~ 150 c, 200 cycles ! (' application a b c j t1 t2 w p e 330 1 62 1.5 12.75 + 0.1 5 2 + 0.5 12.4 +0.2 2 0.2 12 + 0.3 - 0.1 8 0.1 1.75 0.1 f d d1 po p1 ao bo ko t sop-8 5.5 0.1 1.55 0.1 1.55+ 0.25 4.0 0.1 2.0 0.1 6.4 0.1 5.2 0.1 2.1 0.1 0.3 0.013 (mm) ? ! " #!$!% !&%''( ). * , anpec electronics corp. head office : 5f, no. 2 li-hsin road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369 , ' application carrier width cover tape width devices per reel sop- 8 12 9.3 2500 |
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